Image is for reference only , details as Specifications
ALD1103PBL
| 制造商: | Advanced Linear Devices, Inc. |
|---|---|
| 产品类别: | Transistors - FETs, MOSFETs - Arrays |
| 说明书: | ALD1103PBL |
| 描述: | MOSFET 2N/2P-CH 10.6V 14DIP |
| RoHS状态: | 通过无铅认证 |
| 属性 | 属性值 |
|---|---|
| 制造商 | Advanced Linear Devices, Inc. |
| 产品类别 | Transistors - FETs, MOSFETs - Arrays |
| 系列 | - |
| 场效应晶体管类型 | 2 N and 2 P-Channel Matched Pair |
| 包装 | Tube |
| 场效应晶体管的特性 | Standard |
| 部分状态 | Active |
| 权力——马克思 | 500mW |
| 安装方式 | Through Hole |
| 包/箱 | 14-DIP (0.300", 7.62mm) |
| Vgs(th) (Max) @ Id | 1V @ 10µA |
| 工作温度 | 0°C ~ 70°C (TJ) |
| Rds(最大)@ Id, Vgs | 75Ohm @ 5V |
| 供应商设备包 | 14-PDIP |
| 门电荷(Qg)(最大值)@ Vgs | - |
| 漏源极电压(Vdss) | 10.6V |
| 输入电容(Ciss) (Max) @ Vds | 10pF @ 5V |
| 电流-持续排水(Id) @ 25°C | 40mA, 16mA |
