Image is for reference only , details as Specifications
SPI100N03S2L-03
| 制造商: | Infineon Technologies |
|---|---|
| 产品类别: | Transistors - FETs, MOSFETs - Single |
| 说明书: | SPI100N03S2L-03 |
| 描述: | MOSFET N-CH 30V 100A TO-262 |
| RoHS状态: | 通过无铅认证 |
| 属性 | 属性值 |
|---|---|
| 制造商 | Infineon Technologies |
| 产品类别 | Transistors - FETs, MOSFETs - Single |
| 系列 | OptiMOS™ |
| 场效应晶体管类型 | N-Channel |
| 包装 | Tube |
| vg (Max) | ±20V |
| 技术 | MOSFET (Metal Oxide) |
| 场效应晶体管的特性 | - |
| 部分状态 | Obsolete |
| 安装方式 | Through Hole |
| 包/箱 | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| 工作温度 | -55°C ~ 175°C (TJ) |
| Rds(最大)@ Id, Vgs | 3mOhm @ 80A, 10V |
| 功耗(Max) | 300W (Tc) |
| 供应商设备包 | PG-TO262-3-1 |
| 门电荷(Qg)(最大值)@ Vgs | 220nC @ 10V |
| 漏源极电压(Vdss) | 30V |
| 输入电容(Ciss) (Max) @ Vds | 8180pF @ 25V |
| 电流-持续排水(Id) @ 25°C | 100A (Tc) |
| 驱动电压(最大Rds开，最小Rds开) | 10V |
