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MMUN2217LT1G

制造商: ON Semiconductor
产品类别: Transistors - Bipolar (BJT) - Single, Pre-Biased
说明书: MMUN2217LT1G
描述: TRANS PREBIAS NPN 0.246W SOT-23
RoHS状态: 通过无铅认证
属性 属性值
制造商 ON Semiconductor
产品类别 Transistors - Bipolar (BJT) - Single, Pre-Biased
系列 -
包装 Cut Tape (CT)
部分状态 Active
权力——马克思 246mW
安装方式 Surface Mount
包/箱 TO-236-3, SC-59, SOT-23-3
晶体管类型 NPN - Pre-Biased
电阻-基极(R1) 4.7 kOhms
供应商设备包 SOT-23-3 (TO-236)
电阻-发射极基(R2) 10 kOhms
Vce饱和(最大)@ Ib, Ic 250mV @ 1mA, 10mA
电流-集电极(Ic) (Max) 100mA
电流-集电极截止(最大) 500nA
直流电流增益(hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
电压-集电极-发射极击穿(最大) 50V

现货库存 62196 pcs

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最低数量: 1

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