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MUN5213DW1T3G

制造商: ON Semiconductor
产品类别: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
说明书: MUN5213DW1T3G
描述: TRANS 2NPN PREBIAS 0.25W SOT363
RoHS状态: 通过无铅认证
属性 属性值
制造商 ON Semiconductor
产品类别 Transistors - Bipolar (BJT) - Arrays, Pre-Biased
系列 -
包装 Tape & Reel (TR)
部分状态 Active
权力——马克思 250mW
安装方式 Surface Mount
包/箱 6-TSSOP, SC-88, SOT-363
晶体管类型 2 NPN - Pre-Biased (Dual)
基础零件号 MUN52**DW1T
电阻-基极(R1) 47kOhms
频率-过渡 -
供应商设备包 SC-88/SC70-6/SOT-363
电阻-发射极基(R2) 47kOhms
Vce饱和(最大)@ Ib, Ic 250mV @ 300µA, 10mA
电流-集电极(Ic) (Max) 100mA
电流-集电极截止(最大) 500nA
直流电流增益(hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
电压-集电极-发射极击穿(最大) 50V

现货库存 71 pcs

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