Image is for reference only , details as Specifications
EMG11T2R
| 制造商: | ROHM Semiconductor |
|---|---|
| 产品类别: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| 说明书: | EMG11T2R |
| 描述: | TRANS 2NPN PREBIAS 0.15W EMT5 |
| RoHS状态: | 通过无铅认证 |
| 属性 | 属性值 |
|---|---|
| 制造商 | ROHM Semiconductor |
| 产品类别 | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| 系列 | - |
| 包装 | Digi-Reel® |
| 部分状态 | Active |
| 权力——马克思 | 150mW |
| 安装方式 | Surface Mount |
| 包/箱 | 6-SMD (5 Leads), Flat Lead |
| 晶体管类型 | 2 NPN - Pre-Biased (Dual) |
| 基础零件号 | *MG11 |
| 电阻-基极(R1) | 2.2kOhms |
| 频率-过渡 | 250MHz |
| 供应商设备包 | EMT5 |
| 电阻-发射极基(R2) | 47kOhms |
| Vce饱和(最大)@ Ib, Ic | 300mV @ 250µA, 5mA |
| 电流-集电极(Ic) (Max) | 100mA |
| 电流-集电极截止(最大) | 500nA |
| 直流电流增益(hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| 电压-集电极-发射极击穿(最大) | 50V |
