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IMD8AT108

制造商: ROHM Semiconductor
产品类别: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
说明书: IMD8AT108
描述: TRANS NPN/PNP PREBIAS 0.3W SMT6
RoHS状态: 通过无铅认证
属性 属性值
制造商 ROHM Semiconductor
产品类别 Transistors - Bipolar (BJT) - Arrays, Pre-Biased
系列 -
包装 Tape & Reel (TR)
部分状态 Not For New Designs
权力——马克思 300mW
安装方式 Surface Mount
包/箱 SC-74, SOT-457
晶体管类型 1 NPN, 1 PNP - Pre-Biased (Dual)
电阻-基极(R1) 47kOhms
频率-过渡 -
供应商设备包 SMT6
电阻-发射极基(R2) -
Vce饱和(最大)@ Ib, Ic 300mV @ 500µA, 5mA
电流-集电极(Ic) (Max) 100mA
电流-集电极截止(最大) -
直流电流增益(hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
电压-集电极-发射极击穿(最大) 50V

现货库存 60 pcs

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