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2SC2235-Y,T6USNF(M

制造商: Toshiba Semiconductor and Storage
产品类别: Transistors - Bipolar (BJT) - Single
说明书: 2SC2235-Y,T6USNF(M
描述: TRANS NPN 800MA 120V TO226-3
RoHS状态: 通过无铅认证
属性 属性值
制造商 Toshiba Semiconductor and Storage
产品类别 Transistors - Bipolar (BJT) - Single
系列 -
包装 Bulk
部分状态 Obsolete
权力——马克思 900mW
安装方式 Through Hole
包/箱 TO-226-3, TO-92-3 Long Body
晶体管类型 NPN
工作温度 150°C (TJ)
频率-过渡 120MHz
供应商设备包 TO-92MOD
Vce饱和(最大)@ Ib, Ic 1V @ 50mA, 500mA
电流-集电极(Ic) (Max) 800mA
电流-集电极截止(最大) 100nA (ICBO)
直流电流增益(hFE) (Min) @ Ic, Vce 80 @ 100mA, 5V
电压-集电极-发射极击穿(最大) 120V

现货库存 85 pcs

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