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2SC5201,T6MURAF(J

制造商: Toshiba Semiconductor and Storage
产品类别: Transistors - Bipolar (BJT) - Single
说明书: 2SC5201,T6MURAF(J
描述: TRANS NPN 50MA 600V TO226-3
RoHS状态: 通过无铅认证
属性 属性值
制造商 Toshiba Semiconductor and Storage
产品类别 Transistors - Bipolar (BJT) - Single
系列 -
包装 Bulk
部分状态 Obsolete
权力——马克思 900mW
安装方式 Through Hole
包/箱 TO-226-3, TO-92-3 Long Body
晶体管类型 NPN
工作温度 150°C (TJ)
频率-过渡 -
供应商设备包 TO-92MOD
Vce饱和(最大)@ Ib, Ic 1V @ 500mA, 20mA
电流-集电极(Ic) (Max) 50mA
电流-集电极截止(最大) 1µA (ICBO)
直流电流增益(hFE) (Min) @ Ic, Vce 100 @ 20mA, 5V
电压-集电极-发射极击穿(最大) 600V

现货库存 63 pcs

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