Image is for reference only , details as Specifications
RN1911FETE85LF
| 制造商: | Toshiba Semiconductor and Storage |
|---|---|
| 产品类别: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| 说明书: | RN1911FETE85LF |
| 描述: | TRANS 2NPN PREBIAS 0.1W ES6 |
| RoHS状态: | 通过无铅认证 |
| 属性 | 属性值 |
|---|---|
| 制造商 | Toshiba Semiconductor and Storage |
| 产品类别 | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| 系列 | - |
| 包装 | Digi-Reel® |
| 部分状态 | Discontinued at Digi-Key |
| 权力——马克思 | 100mW |
| 安装方式 | Surface Mount |
| 包/箱 | SOT-563, SOT-666 |
| 晶体管类型 | 2 NPN - Pre-Biased (Dual) |
| 电阻-基极(R1) | 10kOhms |
| 频率-过渡 | 250MHz |
| 供应商设备包 | ES6 |
| 电阻-发射极基(R2) | - |
| Vce饱和(最大)@ Ib, Ic | 300mV @ 250µA, 5mA |
| 电流-集电极(Ic) (Max) | 100mA |
| 电流-集电极截止(最大) | 100nA (ICBO) |
| 直流电流增益(hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| 电压-集电极-发射极击穿(最大) | 50V |
