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RN2112CT(TPL3)

制造商: Toshiba Semiconductor and Storage
产品类别: Transistors - Bipolar (BJT) - Single, Pre-Biased
说明书: RN2112CT(TPL3)
描述: TRANS PREBIAS PNP 0.05W CST3
RoHS状态: 通过无铅认证
属性 属性值
制造商 Toshiba Semiconductor and Storage
产品类别 Transistors - Bipolar (BJT) - Single, Pre-Biased
系列 -
包装 Digi-Reel®
部分状态 Obsolete
权力——马克思 50mW
安装方式 Surface Mount
包/箱 SC-101, SOT-883
晶体管类型 PNP - Pre-Biased
电阻-基极(R1) 22 kOhms
供应商设备包 CST3
Vce饱和(最大)@ Ib, Ic 150mV @ 250µA, 5mA
电流-集电极(Ic) (Max) 50mA
电流-集电极截止(最大) 100nA (ICBO)
直流电流增益(hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V
电压-集电极-发射极击穿(最大) 20V

现货库存 72 pcs

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最低数量: 1

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