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RN2130MFV,L3F

制造商: Toshiba Semiconductor and Storage
产品类别: Transistors - Bipolar (BJT) - Single, Pre-Biased
说明书: RN2130MFV,L3F
描述: X34 PB-F VESM TRANSISTOR PD 150M
RoHS状态: 通过无铅认证
属性 属性值
制造商 Toshiba Semiconductor and Storage
产品类别 Transistors - Bipolar (BJT) - Single, Pre-Biased
系列 -
部分状态 Active
权力——马克思 150mW
安装方式 Surface Mount
包/箱 SOT-723
晶体管类型 PNP - Pre-Biased
电阻-基极(R1) 100 kOhms
供应商设备包 VESM
电阻-发射极基(R2) 100 kOhms
Vce饱和(最大)@ Ib, Ic 300mV @ 500µA, 5mA
电流-集电极(Ic) (Max) 100mA
电流-集电极截止(最大) 100nA (ICBO)
直流电流增益(hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
电压-集电极-发射极击穿(最大) 50V

现货库存 53 pcs

参考价 ($) 1 pcs 100 pcs 500 pcs
$0.03 $0.03 $0.03
最低数量: 1

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