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RN2911(T5L,F,T)

制造商: Toshiba Semiconductor and Storage
产品类别: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
说明书: RN2911(T5L,F,T)
描述: TRANS 2PNP PREBIAS 0.2W US6
RoHS状态: 通过无铅认证
属性 属性值
制造商 Toshiba Semiconductor and Storage
产品类别 Transistors - Bipolar (BJT) - Arrays, Pre-Biased
系列 -
包装 Digi-Reel®
部分状态 Obsolete
权力——马克思 200mW
安装方式 Surface Mount
包/箱 6-TSSOP, SC-88, SOT-363
晶体管类型 2 PNP - Pre-Biased (Dual)
电阻-基极(R1) 10kOhms
频率-过渡 200MHz
供应商设备包 US6
电阻-发射极基(R2) -
Vce饱和(最大)@ Ib, Ic 300mV @ 250µA, 5mA
电流-集电极(Ic) (Max) 100mA
电流-集电极截止(最大) 100nA (ICBO)
直流电流增益(hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
电压-集电极-发射极击穿(最大) 50V

现货库存 84 pcs

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