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TPH1110ENH,L1Q

制造商: Toshiba Semiconductor and Storage
产品类别: Transistors - FETs, MOSFETs - Single
说明书: TPH1110ENH,L1Q
描述: MOSFET N-CH 200V 7.2A 8SOP
RoHS状态: 通过无铅认证
属性 属性值
制造商 Toshiba Semiconductor and Storage
产品类别 Transistors - FETs, MOSFETs - Single
系列 U-MOSVIII-H
场效应晶体管类型 N-Channel
包装 Digi-Reel®
vg (Max) ±20V
技术 MOSFET (Metal Oxide)
场效应晶体管的特性 -
部分状态 Discontinued at Digi-Key
安装方式 Surface Mount
包/箱 8-PowerVDFN
Vgs(th) (Max) @ Id 4V @ 200µA
工作温度 150°C (TJ)
Rds(最大)@ Id, Vgs 114mOhm @ 3.6A, 10V
功耗(Max) 1.6W (Ta), 42W (Tc)
供应商设备包 8-SOP Advance (5x5)
门电荷(Qg)(最大值)@ Vgs 7nC @ 10V
漏源极电压(Vdss) 200V
输入电容(Ciss) (Max) @ Vds 600pF @ 100V
电流-持续排水(Id) @ 25°C 7.2A (Ta)
驱动电压(最大Rds开,最小Rds开) 10V

现货库存 81 pcs

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